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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas – topic of research paper in Materials engineering. Download scholarly article PDF and read for free on ...
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Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode: Applied Physics Letters: Vol 98, No 25
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Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect
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a) PL spectra of InGaN/GaN QWs coated with Ag, Al, and Au films. The... | Download Scientific Diagram
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Researching | Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height
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Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting - Lin - 2020 - Advanced Functional Materials - Wiley Online Library
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a) Simulated energy band diagram of the InGaN/GaN MQW structure for... | Download Scientific Diagram
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Characterizations of InGaN/GaN MQW-CoO x photoanode. (a) (Color online)... | Download Scientific Diagram
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Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based uLEDs grown by MOCVD on compliant substrates
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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas | Scientific Reports
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